BlockBeats News, June 17th, according to Citrini researcher Jukan, Samsung Electronics is reportedly advancing the mass production preparation of 10nm-class 7th generation 1d DRAM, planning to introduce the equipment in the first half of next year, with the earliest start of initial production expected by the end of next year. The current 1c DRAM line width is about 11-12nm, while 1d will further shrink to 10-11nm to improve performance and energy efficiency.
This process development is relatively advanced, but key equipment is still in the development stage. Samsung and its partners are actively working on yield and performance optimization research and plan to refine the timeline by the end of the year.
1d DRAM will serve as a core part of Samsung's AI memory business, especially for the HBM5E high-bandwidth memory core chip expected for commercial use in 2029, supporting its competitiveness in the AI chip supply chain.
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