BlockBeats News, August 5th, at the Future of Memory and Storage Conference (FMS), Kioxia and SanDisk officially released their latest BiCS10 3D QLC NAND flash chip, claiming to be the highest-density 3D NAND product officially launched globally to date.

According to the introduction, this chip adopts a 332-layer stacking structure, achieving a storage density of 37 Gb/mm² per unit area, with a high-speed interface of up to 4800 MT/s, and supporting the Separate Command Address (SCA) function, mainly targeting the high-capacity data center SSD market.

Compared to the BiCS10 3D TLC NAND products previously released by the two companies, which had a storage density exceeding 29 Gb/mm², the new QLC NAND further enhances data center storage capacity density. The industry expects that with a similar chip size and number of storage units, the capacity of this chip may reach around 1.33Tb, but the manufacturer has not yet disclosed the specific capacity specifications.

To meet the data center's demands for high performance and low power consumption, Kioxia and SanDisk have also introduced the Power In-Low Transition Terminations (PI-LTT) technology, which enhances high-speed signal integrity while reducing output drive power consumption.

The two companies stated that based on the latest BiCS10 process technology, the new generation QLC NAND not only achieves higher bit density but also is expected to reduce manufacturing costs after ramping up production capacity, thereby supporting higher-capacity SSDs to enter the market at a more competitive price.