BlockBeats News, July 20th, according to Citrini analyst Jukan, Samsung is expanding its NAND flash alliance with Nvidia. Building on the existing DRAM, HBM, and foundry cooperation, Samsung is ramping up V9 supply, initiating V10 mass production, and accelerating the development of V11 with 500 layers.

Driven by the surge in demand for AI server KV cache and Nvidia CMX storage systems (including 576 SSDs with a capacity of 9600TB), Samsung promptly shifted its V-NAND capacity to focus on V9 and plans a significant increase in output. "Nvidia's Rubin CMX will truly absorb NAND supply like a sponge absorbs water. In a straightforward comparison, it is roughly equivalent to adding another Apple-sized demand source to the NAND market."

Furthermore, Samsung has started implementing molybdenum material innovation to enhance density in V10. Senior executive Lee Jae-yong is set to meet with Huang Renxun to discuss deepening cooperation in HBM, NAND supply, and South Korean data center collaboration.